Fabrication and characterization of highly sensitive ZnO/Si SAW device with Pd selective layer for F2 gas sensing

被引：13
作者：
Khan, Saleem [1 ]
Arya, Sandeep [1 ]
Kumar, Suresh [2 ]
Lehana, Parveen [1 ]
机构：
[1] Univ Jammu, Dept Phys & Elect, Jammu 180004, India
[2] Kurukeshtra Univ, Dept Elect Sci, Thanesar, Haryana, India
来源：
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2015年 / 21卷 / 09期
关键词：
ZINC-OXIDE FILMS; THIN-FILM; SENSORS; DEPOSITION; ADSORPTION; MECHANISM; SURFACE; VAPOR; TEMPERATURE; OPERATION;
D O I：
10.1007/s00542-014-2277-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, ZnO nano thin film is prepared on n-type Si substrate with < 100 > orientation using RF sputtering technique and a surface acoustic wave (SAW) based fluorine (F-2) gas sensor integrated on ZnO with Palladium (Pd) on top as sensing layer is fabricated and characterized. The input and output interdigital transducer is fabricated of aluminum (Al) using nanolithography technique. The morphological characterization of ZnO thin film is done using scanning electron microscopy and atomic force microscopy. The XRD confirms the formation of ZnO nanostructured thin film. The voltage handling capability of the fabricated device is evaluated with negative and positive bias voltage. The study confirms that the SAW sensor based on ZnO/Si substrate and Pd sensing layer has good characteristic response of F-2 gas with different concentration of gas from 0.5 to 20 ppm. The sensor shows good reproducibility and its sensitivity is approximately 2.4 kHz ppm(-1).
引用
收藏
页码：2011 / 2017
页数：7
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