Electron-related nonlinearities in GaAs-Ga1-xAlxAs double quantum wells under the effects of intense laser field and applied electric field

被引：29

作者：

Mora-Ramos, M. E. ^{[1
,2
]}

Duque, C. A. ^{[2
]}

Kasapoglu, E. ^{[3
]}

Sari, H. ^{[3
]}

Sokmen, I. ^{[4
]}

机构：

[1] Univ Autonoma Estado Morelos, Fac Ciencias, Cuernavaca 62209, Morelos, Mexico

[2] Univ Antioquia, Inst Fis, Medellin 1226, Colombia

[3] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[4] Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey

来源：

JOURNAL OF LUMINESCENCE | 2013年 / 135卷

关键词：

Double quantum well; Intense laser field; Nonlinear optics; Electric field; 3RD-HARMONIC GENERATION; OPTICAL-ABSORPTION; IMPURITY STATES; MAGNETIC-FIELD; TRANSITIONS; RADIATION; SUPERLATTICES; EXCITON; SINGLE; DONORS;

D O I：

10.1016/j.jlumin.2012.09.025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：301 / 311

页数：11

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