Processing and Electrical Characterization of Metal-Oxide-Semiconductor Structures Prepared by DBSA-Doped TiO2 Nanoparticles

In the present study, using sol-gel method titanium dioxide (TiO2) nanoparticles with a new doping material have been synthesized, and a Dodecyl Benzene Sulfonic Acid (DBSA)-doped TiO2/p-Si Metal-Oxide-Semiconductor (MOS) structure has been fabricated. The characterizations of the structural and morphological properties of the DBSA-doped TiO2 nanoparticles have been carried out by means of X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), respectively. The XRD results show that DBSA-doped TiO2 have a crystalline rutile phase along the (110) growth direction. It was confirmed from AFM images that the nanostructure of DBSA-doped TiO2 is grown as rock-like. The electrical characteristics of the device have also been performed, including current-voltage (I-V) and capacitance-voltage (C-V) at room temperature.