Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers

被引：18

作者：

Moram, M. A. ^{[1
]}

Kappers, M. J. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; MOCVD; structure; dislocations; defects; cathodoluminescence; VAPOR-PHASE EPITAXY; A-PLANE GAN; LATERAL OVERGROWTH; DEFECT REDUCTION; GROWTH; SAPPHIRE; WELLS; MOVPE;

D O I：

10.1002/pssc.200983494

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports the properties of low dislocation density a-plane 11-20 GaN films grown on sapphire using 2 -15 nm ScN interlayers (ILs). Dislocation densities decrease with increasing ScN IL thickness and the surface roughness for coalesced films remains low at 0.7 nm. X-ray diffraction data show a reduction in omega-scan FWHMs at all rotational positions and luminescence intensities increase compared to a control sample without a ScN IL. However, a slight increase in the prismatic stacking fault density is observed, compared to the control sample. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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