Ambipolar charge injection and transport of few-layer topological insulator Bi2Te3 and Bi2Se3 nanoplates

被引：23

作者：

Hao, Guolin ^{[1
]}

Qi, Xiang

Liu, Yundan

Huang, Zongyu

Li, Hongxing

Huang, Kai

Li, Jun

Yang, Liwen

Zhong, Jianxin

机构：

[1] Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 11期

关键词：

SINGLE DIRAC CONE; THIN-FILMS; EXFOLIATION;

D O I：

10.1063/1.4729011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the electrostatic properties of few-layer Bi2Te3 and Bi2Se3 nanoplates (NPs) grown on 300 nm SiO2/Si substrate. Electrons and holes are locally injected in Bi2Te3 and Bi2Se3 nanoplates by the apex of an atomic force microscope tip. Both carriers are delocalized uniformly over the whole nanoplate. The electrostatic property of topological insulator Bi2Te3 and Bi2Se3 nanoplates after charge injection is characterized by Kelvin probe force microscopy under ambient environment and exhibits an ambipolar surface potential behavior. These results provide insight into the electronic properties of topological insulators at the nanometer scale. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729011]

引用

页数：5

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