Vertically aligned conductive carbon nanotube junctions and arrays for device applications

被引：7

作者：

Biswas, SK ^{[1
]}

Vajtai, R

Wei, BQ

Meng, GW

Schowalter, LJ

Ajayan, PM

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[3] Louisiana State Univ, Dept Elect & Comp Engn, Baton Rouge, LA 70803 USA

[4] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期

关键词：

D O I：

10.1063/1.1702130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical transport through high-density arrays of carbon nanotubes grown within vertical pores of anodized alumina was measured. Individual nanotubes were studied using conductive tip atomic force microscopy, with bias applied between the tip and platinum back electrode. Multiwalled nanotubes of diameter about 50 nm, with 5 nm thick walls were found to have a resistivity lower than 1.4x10(-5) Omega m. A potential barrier was found to exist between the sensing tip and nanotube, resulting in nonlinear current-voltage characteristics. Low-resistance contact was formed by breaking down this barrier, once the circuit was stressed beyond 1.5 V. (C) 2004 American Institute of Physics.

引用

页码：2889 / 2891

页数：3

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