Electrical characterization of GaAs metal bonded to Si

被引：10

作者：

Bickford, Justin R. ^{[1
]}

Qiao, D. ^{[1
]}

Yu, P. K. L. ^{[1
]}

Lau, S. S. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2219980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wafer bonding has traditionally focused on producing either insulating or nonlinear heterostructure interfaces; low-resistance Ohmic interfaces would offer the advantage of more efficient current delivery. In this study, doped GaAs was bonded to doped Si using indium and palladium interlayers. During heating above the lower melting point metal indium, a solid alloy is formed bonding the GaAs and Si together, this process is typically referred to as isothermal solidification. This method universally created Ohmic bond interfaces for all doping types. A metric was devised to measure the bond resistivity revealing a resistivity of 1.03x10(-5) Omega cm(2) for n-GaAs bonded to p-Si. (c) 2006 American Institute of Physics.

引用

页数：3

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