Microstructure, surface morphology and optical properties of N-incorporated Ga2O3 thin films on sapphire substrates

被引：11

作者：

Sun, Rui ^{[1
,2
]}

Wang, Gui-Gen ^{[1
,2
]}

Zhang, Hua-Yu ^{[1
,2
]}

Han, Jie-Cai ^{[1
,2
,3
]}

Wang, Xin-Zhong ^{[4
]}

Cui, Lin ^{[1
,2
]}

Kuang, Xu-Ping ^{[1
,2
]}

Zhu, Can ^{[1
,2
]}

Jin, Lei ^{[1
,2
]}

机构：

[1] Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Shenzhen Key Lab Adv Mat, Shenzhen 518055, Peoples R China

[3] Harbin Inst Technol, Ctr Composite Mat, Harbin 150080, Peoples R China

[4] Shenzhen Inst Informat Technol, Shenzhen 518172, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 580卷

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; Nitrogen incorporated; RF magnetron sputtering; Optical properties; Transmittance; Band gap; HIGH-TEMPERATURE; SINGLE-CRYSTALS; GAS SENSORS; TIN-OXIDE; BETA-GA2O3; NANOWIRES; GROWTH;

D O I：

10.1016/j.jallcom.2013.06.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

N-incorporated Ga2O3 films were successfully prepared on sapphire substrates in Ar-N-2 gas mixtures by radio frequency magnetron sputtering. The influence of N-2 gas flux on microstructure, surface morphology and optical properties of N-incorporated Ga2O3 films was analyzed in detail. The films have better crystalline quality after nitrogen incorporating properly, while keeping their original beta-Ga2O3 crystalline structure. The surface morphology of the N-incorporated Ga2O3 films was investigated by atomic force microscopy (AFM). The photoluminescence spectra consisted of ultraviolet emission peak and green emission band were also observed and discussed. The optical transmittance of the as-deposited N-incorporated Ga2O3 films exceeds 80% in the visible range. The optical band gap decreases with increasing the N-2 gas flux, resulting from the formation of Ga-N bonds. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：517 / 521

页数：5

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