Switching performance for fabricated and simulated 4H-SiC high power bipolar transistors

被引：1
|
作者：
Danielsson, E [1 ]
Zetterling, CM [1 ]
Domeij, M [1 ]
Östling, M [1 ]
Forsberg, U [1 ]
Janzén, E [1 ]
机构：
[1] KTH, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984425
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：5 / 8
页数：4
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