Temperature dependence of the current conduction mechanisms in LaAlO3 thin films

被引：19

作者：

Chang, Ingram Yin-Ku ^{[1
]}

Lee, Joseph Ya-Min

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

aluminium; dielectric thin films; lanthanum compounds; leakage currents; metal-insulator boundaries; MOS capacitors; MOSFET; space-charge-limited conduction;

D O I：

10.1063/1.3039074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor capacitors and transistors with LaAlO3 dielectric films were fabricated and the current conduction mechanisms were studied. The LaAlO3 films remained amorphous with postdeposition annealing up to 1000 degrees C. The leakage current density was 8.3x10(-5) A/cm(2) at -1 V. The low leakage current was attributed to the high barrier height of Al/LaAlO3 interface. The Al/LaAlO3 barrier height and the effective electronic mass calculated from Schottky emission and Fowler-Nordheim tunneling were 1.12 eV and 0.27m(0), respectively. The dominant conduction mechanism in the temperature range of 300 K < T < 420 K was space-charge-limited current, and the trapping depth was determined to be 0.36 +/- 0.1 eV.

引用

页数：3

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