Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz

被引：8

作者：

Jin, Z. ^{[1
]}

Su, Y. ^{[1
]}

Cheng, W. ^{[1
]}

Liu, X. ^{[1
]}

Xu, A. ^{[2
]}

Qi, M. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Microwave IC Dept, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 11期

关键词：

InP; DHBT; High current; High breakdown;

D O I：

10.1016/j.sse.2008.09.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A layout of a common-base four-finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and the corresponding DHBT has been fabricated successfully by using planarization technology. The area of each emitter finger was 1 x 15 mu m(2). The breakdown voltage was more than 7 V, the current could be more than 100 mA. The maximum output power can be more than 80 mW derived from the DC characteristics. The maximum oscillation frequency was as high as 305 GHz at I-c = 50 mA and V-CB = 1.5 V. The DHBT is thus promising for the medium power amplifier and voltage controlled oscillator (VCO) applications at W band and higher frequencies. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1825 / 1828

页数：4

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