The Role of Measurement Uncertainty in Achieving First-Pass Design Success

被引:0
作者
Williams, Dylan F. [1 ]
Chamberlin, Richard A. [1 ]
Zhao, Wei [2 ]
Cheron, Jerome [1 ]
Urteaga, Miguel E. [3 ]
机构
[1] NIST, Boulder, CO 80302 USA
[2] Xidian Univ, Xian, Shaanxi Provinc, Peoples R China
[3] Teledyne Sci, Thousand Oaks, CA USA
来源
2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2016年
关键词
measurement uncertainty; microwave measurement; model verification; transistor model;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process. We then investigate the accuracy of the extracted model parameters and the role of measurement uncertainty in gauging the ability of the model to predict the behavior of the transistor in large-signal operating states.
引用
收藏
页码:166 / 169
页数:4
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