The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

被引：8
作者：
Moreno, Cesar [1 ,2 ]
Munuera, Carmen [2 ]
Obradors, Xavier [2 ]
Ocal, Carmen [2 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Young Sci, Tsukuba, Ibaraki 3050047, Japan
[2] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
来源：
BEILSTEIN JOURNAL OF NANOTECHNOLOGY | 2012年 / 3卷
关键词：
conductive scanning probe micoscopy; memristor; 3-D modes; resistive switching; scanning probe microscopy;
D O I：
10.3762/bjnano.3.82
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I-V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I-V bipolar cycles.
引用
收藏
页码：722 / 730
页数：9
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