Inexpensive approach to III-V epitaxy for solar cells

被引：0
|
作者：
Mauk, MG
Feyock, BW
Ball, RB
Cavanaugh, KD
Cotter, JE
机构：
来源：
FUTURE GENERATION PHOTOVOLTAIC TECHNOLOGIES | 1997年 / 404期
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
An approach for low-cost, thin-film polycrystalline GaAs solar cells on large-area silicon-based substrates is described. A proprietary Silicon-Film(TM) sheet material serves as an inexpensive substrate on which large-grain (> 2 mm) polycrystalline GaAs films can be grown. The GaAs films are grown by a simple close-spaced Vapor transport (CSVT) technique. A recrystallized Ge1-xSix buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. A selective mode of growth to reduce thermal stress and lattice mismatch effects, along with a new interconnection scheme using a transparent conducting oxide, is described.
引用
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页码：183 / 190
页数：8
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