Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

被引：10

作者：

Bucamp, A. ^{[1
]}

Coinon, C. ^{[1
]}

Codron, J-L ^{[1
]}

Troadec, D. ^{[1
]}

Wallart, X. ^{[1
]}

Desplanque, L. ^{[1
]}

机构：

[1] Univ Lille, CNRS, Cent Lille, ISEN,Univ Valenciennes,UMR 8520 IEMN, F-59000 Lille, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 512卷

关键词：

Selective epitaxy; Nanostructures; Semiconducting indium compounds; Molecular beam epitaxy; Quantum wells; SUBSTRATE;

D O I：

10.1016/j.jcrysgro.2019.01.033

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the optical and electrical properties of InGaAs thin films and nanostructures grown directly on an InP semi-insulating substrate without any buffer layer using atomic hydrogen assisted molecular beam epitaxy. We confirm the positive influence of the atomic hydrogen flux during the deoxidization process as well as during the growth itself improving the photoluminescence properties of InGaAs quantum wells. We also study the effect of the atomic hydrogen flux on the electrical properties of buffer free undoped, Te or Si doped InGaAs epilayers. Eventually, we demonstrate that atomic hydrogen flux can be used to achieve InGaAs growth selectivity with respect to a SiO2 mask for a growth temperature as low as 470 degrees C and obtain in-plane InGaAs nanostructures on InP with good transport properties.

引用

页码：11 / 15

页数：5

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