Capacitive, resistive and conducting characteristics of bismuth ferrite and lead magnesium niobate based relaxor electronic system

被引：35

作者：

Das, S. N. ^{[1
]}

Pradhan, S. K. ^{[1
]}

Bhuyan, S. ^{[1
]}

Choudhary, R. N. P. ^{[2
]}

机构：

[1] Siksha O Anusandhan Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, Orissa, India

[2] Siksha O Anusandhan Univ, Dept Phys, Bhubaneswar 751030, Orissa, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 24期

关键词：

PHASE-TRANSITION; ELECTRICAL-PROPERTIES; CERAMICS; POLARIZATION; IMPEDANCE; MECHANISM;

D O I：

10.1007/s10854-017-7845-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ferroelectric relaxor based BFO-PMN [bismuth ferrite (BiFeO3; BFO) and lead magnesium niobate (PbMg1/3Nb2/3O3; PMN)] binary electronic system has been synthesized making use of the solid state chemical reaction technique. The capacitive, resistive and conducting characteristics of the prepared solid solutions [((PbxBi1-x)(Mg0.33xNb0.66xFe1-x)O-3) with x = 0.1, 0.2, 0.3 and 0.4] have been studied along with their structural and morphological characteristics. It has been revealed that the dielectric behaviour of BFO-PMN is modified with the addition of PMN content. The nature of phase has also been changed from a general ferroelectric towards a typical relaxor. The comprehensive experimental impedance analysis substantiates the contributions of grain boundary including the grains in the resistive and capacitive characteristics. The prepared compounds illustrate non-Debye type of dielectric relaxation behaviour. The studied material may pave the way for formulation of electronic components.

引用

页码：18913 / 18928

页数：16

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