Thermal stability of structure and properties of CHx doped SiCOH low dielectric constant films

被引：3

作者：

Du Jie ^{[1
]}

Ye Chao ^{[1
]}

Yu Xiao-Zhu ^{[2
]}

Zhang Hai-Yan ^{[1
]}

Ning Zhao-Yuan ^{[1
]}

机构：

[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 01期

基金：

中国国家自然科学基金;

关键词：

SiCOH films; thermal treatment; structure and property; LOW-K; INFRARED-SPECTROSCOPY; CONFIGURATION; DEPOSITION;

D O I：

10.7498/aps.58.575

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper investigates the effect of vacuum thermal treatment on current-voltage (I-V) and capacitance-voltage (C-V) characteristics, hydrophobic properties and microstructure of CH4 doped SiCOH low dielectric constant films deposited by decamethylcyclopentasiloxane (D5) electron cyclotron resonance plasma. The results show that the desorption of thermally unstable CHx groups during the heat treatment can lead to the decrease of leakage current, the variation of SiCOH/Si interface state and the decrease of surface roughness. However, the desorption of CHx groups also leads to the deterioration of hydrophobic property.

引用

页码：575 / 579

页数：5

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