On the Potential of Galinstan-Based Minichannel and Minigap Cooling

被引：86

作者：

Hodes, Marc ^{[1
]}

Zhang, Rui ^{[1
]}

Lam, Lisa Steigerwalt ^{[1
]}

Wilcoxon, Ross ^{[2
]}

Lower, Nate ^{[2
]}

机构：

[1] Tufts Univ, Dept Mech Engn, Medford, MA 02155 USA

[2] Rockwell Collins, Adv Technol Ctr, Cedar Rapids, IA 52498 USA

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2014年 / 4卷 / 01期

关键词：

Galinstan; microchannel heat sink; minichannel heat sink; thermal management of electronics; ENTRY LENGTH; HEAT SINK; LIQUID; CONSTANT; DENSITY; PIPES; FLOW;

D O I：

10.1109/TCPMT.2013.2274699

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Galinstan, a gallium, indium, and tin eutectic, may be exploited for enhanced cooling of microelectronics because of its favorable thermophysical properties. A careful evaluation of its cooling potential, however, has not been undertaken. Provided here is a first-order model to compute the total (i.e., caloric plus conjugate conduction and convection) thermal resistance of galinstan-based heat sinks. Geometrically optimized minichannel heat sinks with rectangular channels for surface area enhancement and minigap, i.e., single parallel-plate channel, heat sinks are considered. Direct liquid cooling of a microprocessor die is envisioned. Therefore, the flow channels within the heat sinks are 302-mu m tall, the pressure drop prescribed across them is 214 kPa, and their streamwise length is varied from 5 to 20 mm. The calculations suggest that galinstan is a better coolant than water in such configurations, reducing thermal resistance by about 40%.

引用

页码：46 / 56

页数：11

共 41 条

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