The interstitial boron and the boron-germanium complex in silicon-germanium crystals

被引：7
|
作者：
Hattendorf, J
Zeitz, WD
Abrosimov, NV
Schröder, W
机构：
[1] Hahn Meitner Inst Berlin GmbH, Bereich Strukturforsch, D-14109 Berlin, Germany
[2] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
silicon-germanium crystals; boron implantation; beta-NMR; DFT calculations;
D O I：
10.1016/S0921-4526(01)00768-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The implantation behaviour of boron in silicon-germanium mixed crystals was studied. The beta-NMR technique was used to measure electric field gradients at boron nuclei in defects. In addition, full-potential DFT calculations were performed to allow the interpretation on the basis of calculated bond lengths and electronic densities. Two defects were identified: a boron-germanium pair on lattice site in a relaxed silicon environment and a complex with interstitial boron. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：535 / 538
页数：4
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