Adsorption of trisilylamine on the Si(100) surface

被引：1

作者：

Bush, B. W. ^{[1
]}

Marquis, A. H. ^{[1
]}

Egwu, O. ^{[1
]}

Craig, J. H., Jr. ^{[1
]}

机构：

[1] Bradley Univ, Dept Phys, Peoria, IL 61625 USA

来源：

SURFACE AND INTERFACE ANALYSIS | 2008年 / 40卷 / 10期

基金：

美国国家科学基金会;

关键词：

silicon; trisilylamine; desorption;

D O I：

10.1002/sia.2917

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Adsorption of trisilylamine (TSA) on the Si(100) surface has been studied using temperature programmed desorption (TPD) and time-of-flight electron stimulated desorption (TOFESD). TPD spectra exhibit the presence of three desorption states denoted by beta(1), beta(2), and beta(3) associated with the presence of a mono-, di-, and tri-hydride state respectively. This behavior is identical with previously observed desorption studies resulting from atomic hydrogen adsorption, indicating that the nitrogen species in the adsorbate has minimal impact on the surface structure of the hydride. Preliminary electron irradiation studies are reported and indicate that the formation of a thin silicon nitride layer is induced as a result of the irradiation. Copyright (c) 2008 John Wiley & Sons, Ltd.

引用

页码：1402 / 1405

页数：4

共 13 条

[1] STUDY OF ELECTRON-BEAM EFFECTS ON TRIMETHYLSILANE COVERED SI(100) [J].