Phosphorus-doped graphene quantum dots loaded on TiO2 for enhanced photodegradation

被引:73
作者
Guo, Zengsheng [1 ,2 ,3 ]
Wu, Hao [1 ,2 ,3 ]
Li, Ming [1 ]
Tang, Tao [1 ]
Wen, Jianfeng [1 ,2 ,3 ]
Li, Xinyu [1 ,2 ,3 ]
机构
[1] Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Minist Prov Jointly Constructed Cultivat Base, State Key Lab Proc Mom Ferrous Met & Featured Mat, Guilin 541004, Peoples R China
[3] Guilin Univ Technol, Key Lab Nonferrous Mat & New Proc Technol, Guilin 541004, Peoples R China
基金
中国国家自然科学基金;
关键词
Phosphorus-doping; Graphene quantum dots; Photocatalysis; Charge transfer; P-n junction; PHOTOCATALYTIC DEGRADATION; ELECTRONIC-PROPERTIES; NANOTUBE ARRAYS; POLLUTANTS; COMPOSITE; PERFORMANCE;
D O I
10.1016/j.apsusc.2020.146724
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reducing the direct recombination of the photogenerated electron-hole pairs in a photocatalytic system is important to improve the photocatalytic efficiency. Transferring the photogenerated carriers to other adsorbates is a usual way to reduce the direct recombination probability. By synthesizing p-type phosphorus-doped graphene quantum dots (P-GQDs) to form p-n junctions with n-type TiO2 nanocomposites, the photogenerated holes of TiO2 can be effectively transferred to P-GQDs, thus the direct carrier recombination of TiO2 is decreased, resulting in the conspicuous improvement of the Methyl Orange (MO) photodegradation efficiency to 95.5% in 14 min. This work provides a new type of p-n junction in highly efficient photodegradation system.
引用
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页数:7
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