Ultra-high energy density thin-film capacitors with high power density using BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3 heterostructure thin films

被引：48
作者：
Yu, Shihui [1 ,2 ]
Zhang, Chunmei [1 ,2 ]
Wu, Muying [3 ]
Dong, Helei [4 ]
Li, Lingxia [1 ,2 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China
[3] Dongguan Univ Technol, Sch Elect Engn & Intelligentizat, Dongguan 523808, Guangdong, Peoples R China
[4] North Univ China, Sch Instrument & Elect, Taiyuan 030051, Peoples R China
来源：
JOURNAL OF POWER SOURCES | 2019年 / 412卷
基金：
中国国家自然科学基金;
关键词：
Energy density; Power density; Dielectric constant; Thin films; DIELECTRIC-PROPERTIES; ELECTRICAL-PROPERTIES; STORAGE PERFORMANCE; POLYMER NANOCOMPOSITES; FERROELECTRIC POLYMER; ENHANCEMENT; TEMPERATURE; COMPOSITES; BEHAVIOR; FILLERS;
D O I：
10.1016/j.jpowsour.2018.12.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultra-high energy storage performance of lead-free ferroelectric materials has been achieved at room temperature by heterostructure composite based on environment-friendly BaSn0.15Ti0.85O3 and Ba0.6Sr0.4TiO3 thin films. The dielectric constant and loss tangent of BaSn0.15Ti0.85O3 layers grown on the Ba0.6Sr0.4TiO3 layers respectively are calculated as 402 and 0.0137 at 100 kHz. The interfacial layer between Ba0.6Sr0.4TiO3 and Ba0.6Sr0.4TiO3 layers can improve the dielectric constant and reduce the loss tangent of heterostructures. The electrical breakdown strength can be significantly enhanced by the interfacial layer, and the influence mechanism is proposed. Ultra-high energy storage density as high as 43.28 J/cm(3), is obtained at a sustained high bias electric field of 2.37 MV/cm with a power density of 6.47 MW/cm(3) and an efficiency of 84.91% in the BaSn0.15Ti0.85O3/Ba0.6Sr0.4TiO3 heterostructure thin films.
引用
收藏
页码：648 / 654
页数：7
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