Growth of CdZnTe single crystals for radiation detectors

被引：0

作者：

Melnikov, AA ^{[1
]}

Sigov, AS ^{[1
]}

Vorotilov, KA ^{[1
]}

Davydov, AA ^{[1
]}

Topalova, LI ^{[1
]}

Zhavoronkov, NV ^{[1
]}

机构：

[1] Moscow State Tech Univ, Moscow State Inst Radioengn Elect & Automat, Moscow 117454, Russia

来源：

GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS | 1999年 / 78卷

关键词：

single crystals; cadmium zinc telluride; vapour phase growth; radiation detectors;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new growth technique of CdZnTe single crystals for room-temperature radiation detectors is developed. It is based on a free growth from the vapour phase on a oriented single crystal seed. Binary polycrystalline CdTe and ZnTe compounds are placed and heated separately to produce divided flows which were introduced into the crystal growth zone where they mixed before deposition on the seed. Monocrystalline and homogeneous materials with high electrical resistivity, low defect density, and crystal volume up to similar to 50 cm(3) are prepared by this technique. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：666 / 669

页数：4

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