TEMPERATURE DEPENDENCE OF THE QUANTUM EFFICIENCY OF STRUCTURES WITH MULTIPLE QUANTUM WELLS InGaN/GaN UNDER PHOTO- AND ELECTROLUMINESCENCE

被引：16

作者：

Prudaev, I. A. ^{[1
]}

Romanov, I. S. ^{[1
]}

Kop'ev, V. V. ^{[1
]}

Shirapov, S. B. ^{[1
]}

Tolbanov, O. P. ^{[1
]}

Khludkov, S. S. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2013年 / 56卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

Light-Emitting Diodes (LED); heterostructures; quantum wells; luminescence; quantum efficiency;

D O I：

10.1007/s11182-013-0096-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the present work, the external quantum efficiency of the blue LED- structures based on InGaN/GaN is studied as a function of the current density (or intensity of optical excitation) under electroluminescence (or photoluminescence) at different temperatures.

引用

页码：757 / 759

页数：3

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