Embedded Flash on a Low-Power 65-nm Logic Technology

被引：1
|
作者：
Fong, S. [1 ]
Ariyoshi, J. [2 ]
Ema, T. [2 ]
机构：
[1] Lattice Semicond Inc, San Jose, CA 95134 USA
[2] Fujitsu Semicond Ltd, Kuwana 5110192, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期
关键词：
Embedded Flash memory; field-programmable gate arrays; low power; INDUCED-DRAIN-LEAKAGE;
D O I：
10.1109/LED.2012.2204950
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully integrated an embedded Flash technology into a 65-nm leading-edge logic technology. We have also optimized the logic transistor characteristics to achieve an extremely low standby current suitable for consumer applications.
引用
收藏
页码：1261 / 1263
页数：3
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