Magnetic Tunnel Junctions Based on Out-of-Plane Anisotropy Free and In-Plane Pinned Layer Structures for Magnetic Field Sensors

被引：39

作者：

Wisniowski, P. ^{[1
]}

Wrona, J. ^{[1
]}

Stobiecki, T. ^{[1
]}

Cardoso, S. ^{[2
,3
]}

Freitas, P. P. ^{[2
,3
]}

机构：

[1] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland

[2] INESC MN, P-1000029 Lisbon, Portugal

[3] IN Inst Nanosci & Nanotechnol, P-1000029 Lisbon, Portugal

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2012年 / 48卷 / 11期

关键词：

Magnetic tunnel junction (MTJ); magnetoresistive field sensors; sensing characteristics; THICKNESS;

D O I：

10.1109/TMAG.2012.2198207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied hysteresis, nonlinearity and sensitivity of CoFeB-MgO based magnetic tunnel junctions with out-of-plane and in-plane magnetizations configuration in the CoFeB free and reference layers. The configuration was achieved by using perpendicular interface anisotropy in the free and exchange bias structure in the pinned layers. For the CoFeB thickness range from 1.05 to 1.4 nm the junctions show linear transfer curves. In this CoFeB thickness range devices show linear range from +/- 3 Oe to +/- 1 kOe, hysteresis better than 0.6 Oe, nonlinearity 1% of the full scale and sensitivity in the range from 0.0045%/Oe to 3.8%/Oe.

引用

页码：3840 / 3842

页数：3

共 9 条

[1]

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