Wide band gap of Strontium doped Hafnium oxide nanoparticles for optoelectronic device applications - Synthesis and characterization

被引：10

作者：

Manikantan, J. ^{[1
]}

Ramalingam, H. B. ^{[2
]}

Shekar, B. Chandar ^{[3
]}

Murugan, B. ^{[4
]}

Kumar, R. Ranjith ^{[5
]}

Santhoshif, J. Sai ^{[6
]}

机构：

[1] Sri Ranganathar Inst Engn & Technol, Dept Phys, Coimbatore, Tamil Nadu, India

[2] Govt Arts Coll, Dept Phys, Udumalpet, Tamil Nadu, India

[3] Kongunadu Coll Arts & Sci, Dept Phys, Nanotechnol Res Lab, Coimbatore, Tamil Nadu, India

[4] Govt Arts Coll, Dept Phys, Nilgiris, Tamil Nadu, India

[5] Nilgiris Educ & Res Fdn, Div Res, Nilgiris, Tamil Nadu, India

[6] INFO Inst Engn, Dept Chem, Coimbatore, Tamil Nadu, India

来源：

MATERIALS LETTERS | 2017年 / 186卷

关键词：

Nanoparticles; FTIR; Optical materials and properties; PRECIPITATION METHOD; FILMS; DEPOSITION; MEMORY;

D O I：

10.1016/j.matlet.2016.08.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strontium doped HfO2 nanoparticles (Sr-HfO2 NPs) were synthesized by a simple co-precipitation method. FTIR and EDAX spectroscopy analysis shows stoichiometries compositions of HfO2 NPs are pure. X-Ray diffraction pattern analysis revealed that the calcined NPs shown the polycrystalline nature of the orthorhombic phase structure. TEM analysis revealed that the morphology of the calcined NPs was spherical in shape with less agglomeration and the crystallite size was about 30 rim. UV-visible spectroscopy analysis revealed that the optical band gap energy of calcined NPs was 5.4 eV.

引用

页码：42 / 44

页数：3

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