Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy

被引：72

作者：

Chen, Feng ^{[1
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Wissensch, Fachgebiet Oberflachenforsch, D-64287 Darmstadt, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 09期

关键词：

IN-SITU PHOTOEMISSION; METAL; STATES; LEVEL; AU;

D O I：

10.1103/PhysRevB.86.094105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.

引用

页数：7

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