Fully Analytical Compact Model for the I-V Characteristics of Resonant Tunneling Diodes

被引：2
作者：
Celino, Daniel R. [1 ]
de Souza, Adelcio M. [1 ]
Plazas, Caio L. M. P. [1 ]
Ragi, Regiane [1 ]
Romero, Murilo A. [1 ]
机构：
[1] Univ Sao Paulo, EESC USP, Dept Elect & Comp Engn, Sao Carlos, Brazil
来源：
35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021) | 2021年
基金：
巴西圣保罗研究基金会;
关键词：
Compact Model; Analytical Modelling; Resonant Tunneling Diode; TCAD Simulation; MATERIAL PARAMETERS; TRANSPORT;
D O I：
10.1109/SBMicro50945.2021.9585749
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully analytical physics-based model for the current-voltage (I-V) characteristics of resonant tunneling diodes. We consider the whole electrical potential distribution in the structure, including the space charge regions in the emitter and collector layers. Additionally, we account for scattering mechanisms experienced by carriers during tunneling through the double barrier region as a function of the applied bias voltage. The model is validated with experimental and numerical data, yielding excellent agreement
引用
收藏
页数：4
相关论文
共 18 条
  • [1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792
  • [2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [3] SPICE model of the resonant-tunnelling diode
    Brown, ER
    McMahon, OB
    Mahoney, LJ
    Molvar, KM
    [J]. ELECTRONICS LETTERS, 1996, 32 (10) : 938 - 940
  • [4] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS
    BUTTIKER, M
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) : 63 - 75
  • [5] Accurate and fully analytical expressions for quantum energy levels in finite potential wells for nanoelectronic compact modeling
    Celino, Daniel R.
    Romero, Murilo A.
    Ragi, Regiane
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (06) : 2411 - 2419
  • [6] CALCULATION OF PHONON-ASSISTED TUNNELING AND VALLEY CURRENT IN A DOUBLE-BARRIER DIODE
    CHEVOIR, F
    VINTER, B
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1859 - 1861
  • [7] Toward Mobile Integrated Electronic Systems at THz Frequencies
    Hillger, Philipp
    van Delden, Marcel
    Thanthrige, Udaya Sampath Miriya
    Ahmed, Aya Mostafa
    Wittemeier, Jonathan
    Arzi, Khaled
    Andree, Marcel
    Sievert, Benedikt
    Prost, Werner
    Rennings, Andreas
    Erni, Daniel
    Musch, Thomas
    Weimann, Nils
    Sezgin, Aydin
    Pohl, Nils
    Pfeiffer, Ullrich R.
    [J]. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 2020, 41 (07) : 846 - 869
  • [8] Single and multiband modeling of quantum electron transport through layered semiconductor devices
    Lake, R
    Klimeck, G
    Bowen, RC
    Jovanovic, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 7845 - 7869
  • [9] Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss
    Maekawa, Takeru
    Kanaya, Hidetoshi
    Suzuki, Safumi
    Asada, Masahiro
    [J]. APPLIED PHYSICS EXPRESS, 2016, 9 (02)
  • [10] THEORETICAL-ANALYSIS OF PEAK TO VALLEY RATIO DEGRADATION CAUSED BY SCATTERING PROCESSES IN MULTIBARRIER RESONANT TUNNELING DIODES
    MIZUTA, H
    TANOUE, T
    TAKAHASHI, S
    [J]. PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1989, : 274 - 283
12