Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

被引：22

作者：

Okada, Tatsuya ^{[1
]}

Mugiraneza, Jean de Dieu ^{[1
]}

Shirai, Katsuya ^{[1
]}

Suzuki, Toshiharu ^{[1
]}

Noguchi, Takashi ^{[1
]}

Matsushima, Hideki ^{[2
]}

Hashimoto, Takao ^{[2
]}

Ogino, Yoshiaki ^{[2
]}

Sahota, Eiji ^{[2
]}

机构：

[1] Univ Ryukyus, Fac Engn, Nishihara, Okinawa 9030213, Japan

[2] Hitachi Comp Peripherals Co Ltd, Nakai, Kanagawa 2590180, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 03期

关键词：

SOLID-PHASE CRYSTALLIZATION; TRANSISTORS; SILICON; TEMPERATURE;

D O I：

10.1143/JJAP.51.03CA02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si thin film coated on a flexible polyimide (PI) substrate was successfully crystallized by blue multi-laser diode annealing (BLDA) in the CW mode. The precursor Si film of 50nm thickness was stably deposited at room temperature using a radio-frequency (RF) sputtering machine. Subsequently, a blue (445 nm) laser beam of 1.1W was irradiated onto the Si film at a scan speed of 500mm/s. After irradiation, neither damage to the substrate nor degradation of the Si film surface was observed, and the Si surface was kept smooth within 4.2nm (RMS). By Raman peak shift at 520 cm(-1) and transmission electron microscope (TEM) observation, the crystalline fraction of 100% was estimated in spite of the presence of micro-grains of similar to 50nm in diameter. The BLDA allows the realization of ultra-low temperature polycrystalline silicon (poly-Si) and is suitable for the next-generation system on panel (SoP). (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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