Energy level alignment at the porphyrin/cobaltocene interface: From transfer doping to cobalt intercalation

被引:3
作者
Smets, Yaou [1 ]
Rietwyk, Kevin J. [1 ,3 ]
Fingerle, Mathias [2 ,3 ]
Schmitt, Felix [2 ,3 ]
Lach, Stefan [2 ,3 ]
Ley, Lothar [1 ,4 ]
Ziegler, Christiane [2 ,3 ]
Pakes, Christopher I. [1 ]
机构
[1] La Trobe Univ, Dept Phys, Bundoora, Vic 3086, Australia
[2] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany
[3] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany
[4] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany
基金
澳大利亚研究理事会;
关键词
Energy level alignment; Doping efficiency; Surface transfer doping; ELECTRONIC-STRUCTURE;
D O I
10.1016/j.orgel.2013.12.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
N-type doping of the organic semiconductor zinc tetraphenylporphyrin (ZnTPP) by overlayers of the reducing molecule decamethylcobaltocene (CoCp2*) is demonstrated using photoelectron spectroscopy. A transfer doping model involving integer charge transfer between molecules reproduces quantitatively all measured level shifts as a function of CoCp2* coverage using the ionisation potential of CoCp2* and the electron affinity of ZnTPP as sole input parameters. The model yields the experimentally observed limitation of doping to the first monolayer of cobaltocene while further layers remain neutral without the need to resort to special bonding arrangements for the first monolayer. Temperature-dependent studies reveal that doping is still present at room temperature, despite the high vapour pressure of CoCp2*. Higher annealing temperatures initiate CoCp2* molecular dissociation and diffusion of Co atoms into the ZnTPP film. Hence, the nature of doping changes from surface molecular transfer doping to bulk metallic doping as a function of temperature. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:531 / 536
页数:6
相关论文
共 23 条
  • [1] Interface electronic structure of organic semiconductors with controlled doping levels
    Blochwitz, J.
    Fritz, T.
    Pfeiffer, M.
    Leo, K.
    Alloway, D. M.
    Lee, P. A.
    Armstrong, N. R.
    [J]. ORGANIC ELECTRONICS, 2001, 2 (02) : 97 - 104
  • [2] Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces
    Braun, Slawomir
    Salaneck, William R.
    Fahlman, Mats
    [J]. ADVANCED MATERIALS, 2009, 21 (14-15) : 1450 - 1472
  • [3] Doping of boron carbides with cobalt, using cobaltocene
    Carlson, L.
    Lagraffe, D.
    Balaz, S.
    Ignatov, A.
    Losovyj, Y. B.
    Choi, J.
    Dowben, P. A.
    Brand, J. I.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 89 (01): : 195 - 201
  • [4] Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices
    Chan, Calvin K.
    Zhao, Wei
    Barlow, Stephen
    Marder, Seth
    Kahn, Antoine
    [J]. ORGANIC ELECTRONICS, 2008, 9 (05) : 575 - 581
  • [5] N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene
    Chan, Calvin K.
    Amy, Fabrice
    Zhang, Qing
    Barlow, Stephen
    Marder, Seth
    Kahn, Antoine
    [J]. CHEMICAL PHYSICS LETTERS, 2006, 431 (1-3) : 67 - 71
  • [6] Surface transfer doping of hydrogen-terminated diamond by C60F48: Energy level scheme and doping efficiency
    Edmonds, M. T.
    Wanke, M.
    Tadich, A.
    Vulling, H. M.
    Rietwyk, K. J.
    Sharp, P. L.
    Stark, C. B.
    Smets, Y.
    Schenk, A.
    Wu, Q. -H.
    Ley, L.
    Pakes, C. I.
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2012, 136 (12)
  • [7] Surface-confined two-step synthesis of the complex (ammine)(meso-tetraphenylporphyrinato)-zinc(II) on Ag(111)
    Flechtner, Ken
    Kretschmann, Andreas
    Bradshaw, Liam R.
    Walz, Marie-Madeleine
    Steinrueck, Hans-Peter
    Gottfried, J. Michael
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (16) : 5821 - 5824
  • [8] Organic homojunction diodes with a high built-in potential: Interpretation of the current-voltage characteristics by a generalized Einstein relation
    Harada, K
    Werner, AG
    Pfeiffer, M
    Bloom, CJ
    Elliott, CM
    Leo, K
    [J]. PHYSICAL REVIEW LETTERS, 2005, 94 (03)
  • [9] Study of in situ adsorption and intercalation of cobaltocene into SnS2 single crystals by photoelectron spectroscopy
    Hernán, L
    Morales, J
    Sánchez, L
    Santos, J
    Espinós, JP
    González-Elipe, AR
    Holgado, JP
    [J]. SURFACE SCIENCE, 2001, 477 (2-3) : L295 - L300
  • [10] Energetics of metal-organic interfaces: New experiments and assessment of the field
    Hwang, Jaehyung
    Wan, Alan
    Kahn, Antoine
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2009, 64 (1-2) : 1 - 31