Characterization of charge injection and photovoltaic effects of hybrid inorganic-organic GaN/pentacene heterostructures

被引：4

作者：

Slawinski, M. ^{[1
]}

Weingarten, M. ^{[1
]}

Axmann, S. ^{[1
]}

Urbain, F. ^{[1
]}

Fahle, D. ^{[1
]}

Heuken, M. ^{[2
]}

Vescan, A. ^{[1
]}

Kalisch, H. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, D-52074 Aachen, Germany

[2] AIXTRON SE, D-52134 Herzogenrath, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

ABSORPTION-COEFFICIENT; OPTICAL-PROPERTIES; GAN; PENTACENE; SILICON; TRANSISTORS; MOBILITY; CRYSTAL; GROWTH; ENERGY;

D O I：

10.1063/1.4824985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates the electrical and optical properties of hybrid GaN/pentacene heterostructures. We identify bipolar transport in GaN/pentacene by I-V and C-V measurements. Further results show a much stronger photocurrent under AM1.5 illumination of GaN/pentacene/Au structures than that of simple GaN/Au Schottky diodes. The higher photocurrent can be explained with the additional absorption of low-energy photons by pentacene. We introduce an interface model describing the behaviour of photogenerated charge carriers pairs for the case of Ga-polar n-GaN and pentacene. These results demonstrate the enhancement of inorganic device performance by integration of organic semiconductors. (C) 2013 AIP Publishing LLC.

引用

页数：4

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