Double-Sided Tin Nanowire Arrays for Advanced Thermal Interface Materials

被引:0
作者
Feng, Bo [1 ]
Faruque, Fardin [1 ]
Bao, Peng [1 ]
Chien, An-Ting [2 ]
Kumar, Satish [2 ]
Peterson, G. P. [1 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mat Sci & Mech Engn, Atlanta, GA 30332 USA
来源
2013 TWENTY NINTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM (SEMI-THERM) | 2013年
关键词
Thermal interface material; nanowire array; Heat conduction; Thermal resistance; CONTACT CONDUCTANCE; CARBON NANOTUBES; METALLIC COATINGS; CONDUCTIVITY; TEMPERATURES; ENHANCEMENT; FABRICATION; SURFACES; FILMS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This investigation examines a fundamentally new type of thermal interface material (TIM) based on a double-sided array of tin nanowires (NWs) prepared using a hot-pressing approach with the assistance of anodic aluminum oxide templates. The metal based TIM effectively reduces the contact resistance, while the flexible nanowires show excellent mechanical compliance to increase the actual contact area with the mating rough surfaces. The results indicate that the overall thermal contact resistance of the two rough copper surfaces assisted by the tin NW array can reduce the overall resistance to 29 mm(2)KW(-1) at 0.25 MPa and 20 mm(2)KW(-1) at 1.0 MPa.
引用
收藏
页码:105 / 109
页数:5
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