Recess-Free AlGaN/GaN Lateral Schottky Barrier Controlled Schottky Rectifier with Low Turn-on Voltage and High Reverse Blocking

High-performance A1GaN/GaN-on-Si diodes are fabricated with lateral Schottky barrier controlled Schottky rectifier (LSBS) on thin-barrier (5nm) A1GaN/GaN heterostructures, which features a recess-free process, enabling better electrostatic control to pinch off the channel under the anode region. In this way, low leakage currents (3 orders of magnitude lower than conventional recessed Schottky-barrier-diode (SBD)) and a high reverse breakdown voltage of 1700 V (410 A/mm) are reached, together with a low onset voltage of only 0.37 V and a record low on-state resistance Roem of 1 macm2 for GaN-based SBDs with an Anode-to-Cathode distance (LAC) of 10 nm. This is attributed to the combination of an effectively preserved 2DEG by LPCVD SiNx passivation and a hybrid Schottky /Ohmic anode. Thanks to the recess free technology and low damage in the Schottky region, stable preliminary HTRB performance are obtained. The proposed diode fabrication is compatible with GaN depletion/enhancement MIS-HEMTs process flow, enabling integration in the promising smart GaN platform.