Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

被引：12

作者：

Dadgar, A. ^{[1
]}

Groh, L. ^{[1
]}

Metzner, S. ^{[1
]}

Neugebauer, S. ^{[1
]}

Blaesing, J. ^{[1
]}

Hempel, T. ^{[1
]}

Bertram, F. ^{[1
]}

Christen, J. ^{[1
]}

Krost, A. ^{[1
]}

Andreev, Z. ^{[2
]}

Witzigmann, B. ^{[2
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, Fak Nat Wissensch, D-39106 Magdeburg, Germany

[2] Univ Kassel, Computat Elect & Photon Grp, D-34121 Kassel, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

关键词：

EPITAXY; GAN;

D O I：

10.1063/1.4793185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an over 50% reduction in polarization field strength in c-axis oriented InGaN multi-quantum wells (MQW) by applying quaternary AlGaInN barrier layers with better polarization matching to InGaN than GaN barriers. With the reduction in polarization fields, a strong blue-shift in photoluminescence is observed in agreement with theoretical expectation and simulations. By gracing incidence x-ray diffraction measurements, we demonstrate that partial relaxation already occurs for GaN/InGaN MQWs. As a consequence, the requirement of higher In-content layers for green light emission is in conflict with increasing strain leading to lattice relaxation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793185]

引用

页数：4

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