Instability and Drift Phenomena in Switching RF-MEMS Microsystems

被引：3
作者：
Mulloni, Viviana [1 ]
机构：
[1] Fdn Bruno Kessler, Ctr Mat & Microsyst, I-38123 Trento, Italy
来源：
ACTUATORS | 2019年 / 8卷 / 01期
关键词：
RF-MEMS; RF switch; electrical actuation; ACTUATION VOLTAGE; TEMPERATURE; RELIABILITY; DEVICE; DESIGN;
D O I：
10.3390/act8010015
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
MEMS switches include mobile beams in their mechanical structure and these suspended parts are essential for the device functioning. This paper illustrates the most important instability phenomena related to MEMS switches. Starting from the most important instability exploited in these devices-the electrical actuation-the paper also analyzes other important effects related to instability phenomena, which are very common in this type of technology. Instabilities due to dielectric charge trapping, fabrication tolerances, mechanical deformation, contact wear, and temperature variation are duly analyzed, giving a comprehensive view of the complexity encountered in the reliable functioning of these apparently simple devices.
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页数：10
相关论文
共 37 条
  • [1] [Anonymous], 2004, RF MEMS THEORY DESIG
  • [2] Transient Evolution of Mechanical and Electrical Effects in Microelectromechanical Switches Subjected to Long-Term Stresses
    Barbato, Marco
    Cester, Andrea
    Mulloni, Viviana
    Margesin, Benno
    Meneghesso, Gaudenzio
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) : 3825 - 3831
  • [3] RF-MEMS switches for reconfigurable integrated circuits
    Brown, ER
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) : 1868 - 1880
  • [4] Chen K.-S., 2006, MEMS NEMS HDB TECHNI, P1252
  • [5] Redundancy RF MEMS multiport switches and switch matrices
    Daneshmand, Mojgan
    Mansour, Raafat R.
    [J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2007, 16 (02) : 296 - 303
  • [6] Review of Device and Reliability Physics of Dielectrics in Electrostatically Driven MEMS Devices
    de Groot, Wilhelmus Adrianus
    Webster, James R.
    Felnhofer, Daniel
    Gusev, Evgeni P.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2009, 9 (02) : 190 - 202
  • [7] de los Santos H., 2002, RF MEMS circuit design for wireless communications
  • [8] Goldsmith C, 2001, IEEE MTT-S, P227, DOI 10.1109/MWSYM.2001.966876
  • [9] Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation
    Lamhamdi, M.
    Pons, P.
    Zaghloul, U.
    Boudou, L.
    Coccetti, F.
    Guastavino, J.
    Segui, Y.
    Papaioannou, G.
    Plana, R.
    [J]. MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) : 1248 - 1252
  • [10] Mechanical modelling of capacitive RF MEMS shunt switches
    Marcelli, Romolo
    Lucibello, Andrea
    De Angelis, Giorgio
    Proietti, Emanuela
    Comastri, Daniele
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2010, 16 (07): : 1057 - 1064
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