Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy

被引：29

作者：

Schulze, F ^{[1
]}

Dadgar, A ^{[1
]}

Bläsing, J ^{[1
]}

Hempel, T ^{[1
]}

Diez, A ^{[1
]}

Christen, J ^{[1
]}

Krost, A ^{[1
]}

机构：

[1] Univ Magdeburg, Fak Nat Wissensch, Inst Expt Phys, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 289卷 / 02期

关键词：

characterization; crystal structure; substrates; X-ray diffraction; metalorganic vapour-phase epitaxy; nitrides;

D O I：

10.1016/j.jcrysgro.2005.12.073

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly oriented wurtzite-type GaN layers were grown on Si(001) substrates by metalorganic vapor-phase epitaxy. The use of a high-temperature AlN seed layer at more than 1100 degrees C allows growing solely c-axis-oriented crystallites. However, due to the symmetry of the Si(001) surface two in-plane alignments of the GaN occur, twisted by 30 degrees. Therefore, to obtain a coalesced GaN surface, the selection of only one certain orientation is necessary. The approach of 4 degrees off-oriented substrates enabled to grow a flat, highly mono-oriented GaN layer on Si(001), with both kinds of in-plane alignments realizable. The crystalline quality of the GaN was investigated by X-ray analysis and scanning electron microscopy. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：485 / 488

页数：4

共 19 条

[1] AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates [J].

Brown, JD ;

Borges, R ;

Piner, E ;

Vescan, A ;

Singhal, S ;

Therrien, R .

SOLID-STATE ELECTRONICS, 2002, 46 (10) :1535-1539

[2] InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition [J].

Egawa, T ;

Zhang, B ;

Nishikawa, N ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :528-530

[3] LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP ON SI(001) [J].

GRUNDMANN, M ;

KROST, A ;

BIMBERG, D .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :284-286

[4] Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE [J].

Honda, Y ;

Kameshiro, N ;

Yamaguchi, M ;

Sawaki, N .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :82-86

[5] Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy [J].

Joblot, S ;

Semond, F ;

Natali, F ;

Vennéguès, P ;

Laügt, M ;

Cordier, Y ;

Massies, J .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2187-2190

[6] Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(001) [J].

Joblot, S ;

Feltin, E ;

Beraudo, E ;

Vennéguès, P ;

Leroux, M ;

Omnès, F ;

Laügt, M ;

Cordier, Y .

JOURNAL OF CRYSTAL GROWTH, 2005, 280 (1-2) :44-53

[7]

Krost A, 2002, PHYS STATUS SOLIDI A, V194, P361, DOI 10.1002/1521-396X(200212)194:2<361::AID-PSSA361>3.0.CO

[8]

2-R

[9] Epitaxial relationship in the AlN/Si(001) heterosystem [J].

Lebedev, V ;

Jinschek, J ;

Kaiser, U ;

Schröter, B ;

Richter, W ;

Kräusslich, J .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2029-2031

[10] Hexagonal AlN films grown on nominal and off-axis Si(001) substrates [J].

Lebedev, V ;

Jinschek, J ;

Krausslich, J ;

Kaiser, U ;

Schröter, B ;

Richter, W .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) :426-431

← 1 2 →