Enhanced dielectric properties of (Ba,Sr)TiO3//Ba(Zr,Ti)O3 heterostructures with optimized structure design

被引：14

作者：

Liu, Ming ^{[1
,2
,3
]}

Liu, Jian ^{[3
]}

Ma, Chunrui ^{[3
]}

Collins, Gregory ^{[3
]}

Chen, Chonglin ^{[3
,4
]}

Alemayehu, Andy D. ^{[5
]}

Subramanyam, Guru ^{[5
]}

He, Jie ^{[6
]}

Jiang, Jiechao ^{[6
]}

Meletis, Efstathios I. ^{[6
]}

Bhalla, Amar ^{[7
]}

机构：

[1] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China

[3] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[4] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[5] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA

[6] Univ Texas Arlington, Dept Mat Sci & Engn, Arlington, TX 76019 USA

[7] Univ Texas San Antonio, Dept Elect & Comp Engn, San Antonio, TX 78249 USA

来源：

CRYSTENGCOMM | 2013年 / 15卷 / 34期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; MICROWAVE PROPERTIES; FIELD; MGO;

D O I：

10.1039/c3ce27106d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Environment-friendly ferroelectric Mn:BST//Mn:BZT heterostructures were epitaxially deposited on (001) MgO substrates by pulsed laser deposition with different combination ratios of Mn:BST over Mn:BZT, 2.5:7.5; 1:1; and 7.5:2.5. The microstructural studies indicate that the in-plane interface relationships between the heterostructures and the substrate are determined to be (001)(Mn:BST)//(001)(Mn:BZT)//(001)(MgO) and [100](Mn:BST)//[100](Mn:BZT)//[100](MgO). The K-u band microwave (15.5-18 GHz) dielectric property characterizations show that the dielectric constant, dielectric loss, and tunabilities of the heterostructures are highly dependent upon the sequences of Mn:BST to Mn:BZT. The optimized dielectric tunability with a low loss tangent was found to be 58.1%-74.4% under the combination ratio of 1:1 for Mn:BST to Mn:BZT, which suggests that the as-grown ferroelectric heterostructures can be developed for room temperature tunable microwave elements and related device applications.

引用

页码：6641 / 6644

页数：4

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