Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

被引：49

作者：

Yao, B. Q. ^{[1
]}

Zheng, L. L. ^{[1
]}

Duan, X. M. ^{[1
]}

Wang, Y. Z. ^{[1
]}

Zhao, G. J. ^{[2
]}

Dong, Q. ^{[2
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150080, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, R&D Ctr Laser & Optoelect Mat, Shanghai 201800, Peoples R China

来源：

LASER PHYSICS LETTERS | 2008年 / 5卷 / 10期

关键词：

solid-state laser; diode pumping; Tm : Lu2SiO5;

D O I：

10.1002/lapl.200810054

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on room temperature laser actions of a novel thulium-doped crystal Tm center dot Lu2SiO5 (LSO) under diode pumping. An optical optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous wave (CW) output power of 0.67 W. The emission wavelengths of Tm LSO laser were centered at 2058.4 nm with bandwidth of similar to 13.6 nm.

引用

页码：714 / 718

页数：5

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