Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n+-Ge:P Source and Drain

被引：0

作者：

Moriyama, Yoshihiko ^{[1
,2
]}

Kamimuta, Yuuichi ^{[1
]}

Kamata, Yoshiki ^{[1
]}

Ikeda, Keiji ^{[1
]}

Takeuchi, Shotaro ^{[2
]}

Nakamura, Yoshiaki ^{[2
]}

Sakai, Akira ^{[2
]}

Tezuka, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Green Nanoelect Ctr, Collaborat Res Team, Tsukuba, Ibaraki 3058569, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：35 / 36

页数：2

共 50 条

[31] Raised Ge-Source with n plus pocket and recessed drain line TFET: A proposal for biosensing applications [J].

Anam, Aadil ;

Amin, S. Intekhab ;

Prasad, Dinesh .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2024, 306

[32] DEFECT HETEROJUNCTION MODEL FOR ANOMALOUS PHOTORESPONSE OF P/N GAAS GROWN ON N-GE SUBSTRATES [J].

PARTAIN, L ;

GROUNNER, M .

CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 :403-408

[33] Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates [J].

Harris, Thomas R. ;

Ryu, Mee-Yi ;

Yeo, Yung Kee ;

Beeler, Richard T. ;

Kouvetakis, John .

CURRENT APPLIED PHYSICS, 2014, 14 :S123-S128

[34] HOLE LIFETIME IN EPITAXIAL N-GE LAYERS GROWN ON P-GAAS SUBSTRATES [J].

SCHULZE, RG ;

KRUSE, PW .

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03) :498-&

[35] P plus /n junction leakage in thin selectively grown Ge-in-STI substrates [J].

Eneman, G. ;

Yang, R. ;

Wang, G. ;

De Jaeger, B. ;

Loo, R. ;

Claeys, C. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. M. ;

Simoen, E. .

THIN SOLID FILMS, 2010, 518 (09) :2489-2492

[36] CURRENT-VOLTAGE CHARACTERISTICS OF P-GE/N-GAAS HETEROJUNCTION DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWANAKA, M ;

SONE, JI .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) :575-580

[37] High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain [J].

Maeda, T ;

Ikeda, K ;

Nakaharai, S ;

Tezuka, T ;

Sugiyama, N ;

Moriyama, Y ;

Takagi, S .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (02) :102-104

[38] Dopant Segregation and Nickel Stanogermanide Contact Formation on p+ Ge0.947Sn0.053 Source/Drain [J].

Han, Genquan ;

Su, Shaojian ;

Zhou, Qian ;

Guo, Pengfei ;

Yang, Yue ;

Zhan, Chunlei ;

Wang, Lanxiang ;

Wang, Wei ;

Wang, Qiming ;

Xue, Chunlai ;

Cheng, Buwen ;

Yeo, Yee-Chia .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) :634-636

[39] Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain [J].

Maeda, Tatsuro ;

Ikeda, Keiji ;

Nakaharai, Shu ;

Tezuka, Tsutomu ;

Sugiyama, Naoharu ;

Moriyama, Yoshihiko ;

Takagi, Shinichi .

THIN SOLID FILMS, 2006, 508 (1-2) :346-350

[40] THERMOSTIMULATED CURRENT IN A P-N-JUNCTION BASED ON GE-SI ALLOY [J].

BAKIROV, MY ;

MADATOV, RS ;

MUSTAFAEV, YM .

INORGANIC MATERIALS, 1978, 14 (10) :1490-1491

← 1 2 3 4 5 →