Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n+-Ge:P Source and Drain

被引：0
作者：
Moriyama, Yoshihiko [1 ,2 ]
Kamimuta, Yuuichi [1 ]
Kamata, Yoshiki [1 ]
Ikeda, Keiji [1 ]
Takeuchi, Shotaro [2 ]
Nakamura, Yoshiaki [2 ]
Sakai, Akira [2 ]
Tezuka, Tsutomu [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Green Nanoelect Ctr, Collaborat Res Team, Tsukuba, Ibaraki 3058569, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：35 / 36
页数：2
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