Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n+-Ge:P Source and Drain

被引：0

作者：

Moriyama, Yoshihiko ^{[1
,2
]}

Kamimuta, Yuuichi ^{[1
]}

Kamata, Yoshiki ^{[1
]}

Ikeda, Keiji ^{[1
]}

Takeuchi, Shotaro ^{[2
]}

Nakamura, Yoshiaki ^{[2
]}

Sakai, Akira ^{[2
]}

Tezuka, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Green Nanoelect Ctr, Collaborat Res Team, Tsukuba, Ibaraki 3058569, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：35 / 36

页数：2

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