Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n+-Ge:P Source and Drain

被引：0
|
作者：
Moriyama, Yoshihiko [1 ,2 ]
Kamimuta, Yuuichi [1 ]
Kamata, Yoshiki [1 ]
Ikeda, Keiji [1 ]
Takeuchi, Shotaro [2 ]
Nakamura, Yoshiaki [2 ]
Sakai, Akira [2 ]
Tezuka, Tsutomu [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Green Nanoelect Ctr, Collaborat Res Team, Tsukuba, Ibaraki 3058569, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：35 / 36
页数：2
相关论文
共 50 条
  • [11] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF MBE GROWN GE LAYERS AND ITS APPLICATION TO COLLECTOR-TOP N-GAAS/P-GE/N-GE HBTS
    KIMURA, T
    KAWANAKA, M
    BABA, T
    SONE, J
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 55 - 60
  • [12] Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
    Shengurov, V. G.
    Filatov, D. O.
    Denisov, S. A.
    Chalkov, V. Yu.
    Alyabina, N. A.
    Zaitsev, A. V.
    SEMICONDUCTORS, 2019, 53 (09) : 1238 - 1241
  • [13] Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
    V. G. Shengurov
    D. O. Filatov
    S. A. Denisov
    V. Yu. Chalkov
    N. A. Alyabina
    A. V. Zaitsev
    Semiconductors, 2019, 53 : 1238 - 1241
  • [14] Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices
    Oka, Hiroshi
    Minoura, Yuya
    Hosoi, Takuji
    Shimura, Takayoshi
    Watanabe, Heiji
    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
  • [15] Cryogenic implantation for source/drain junctions in Ge p-channel (Fin) FETs
    Bhatt, P.
    Swarnkar, P.
    Mittal, S.
    Basheer, F.
    Thomidis, C.
    Hatem, C.
    Colombeau, B.
    Variam, N.
    Nainani, A.
    Lodha, S.
    2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2014, : 235 - +
  • [16] Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs
    Yang, H.
    Gao, J.
    Nakashima, H.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 26 : 614 - 619
  • [17] Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain
    Ko, Eunjung
    Lee, Juhee
    Ryu, Seung-Wook
    Shin, Hyunsu
    Park, Seran
    Ko, Dae-Hong
    COATINGS, 2021, 11 (06)
  • [18] Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs
    Nagatomi, Yuta
    Tanaka, Shintaro
    Nagaoka, Yuichi
    Yamamoto, Keisuke
    Wang, Dong
    Nakashima, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (07)
  • [19] Drive current of ultrathin Ge-on-insulator n-channel MOSFETs
    Azuma, Y.
    Mori, T.
    Tsuchiya, H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3153 - 3155
  • [20] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS
    DONNELLY, JP
    MILNES, AG
    PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &
12345