Excess phase formation during sublimation growth of silicon carbide

被引：0
作者：
Karpov, SY
Makarov, YN
Ramm, MS
Talalaev, RA
机构：
[1] UNIV ERLANGEN NURNBERG,FLUID MECH INST,D-91058 ERLANGEN,GERMANY
[2] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical approach to predict formation of excess phases during crystal growth is applied to the analysis of sublimation growth of SIC in the sandwich cell. A diagram is obtained which can be used for determination of growth conditions favourable for SiC growth with liquid Si or graphite inclusions. The predictions are confirmed by experimental data on MBE of SiC.
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页码：69 / 72
页数：4
相关论文
共 5 条
[1]   THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER [J].
DROWART, J ;
DEMARIA, G ;
INGHRAM, MG .
JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) :1015-1021
[2]   MBE GROWTH OF 3C.SIC/6H.SIC AND THE ELECTRIC PROPERTIES OF ITS P-N-JUNCTION [J].
KANEDA, S ;
SAKAMOTO, Y ;
MIHARA, T ;
TANAKA, T .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :536-542
[3]  
KARPOV SY, 1995, UNPUB J CRYSTAL GROW
[4]   CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD [J].
TUOMINEN, M ;
YAKIMOVA, R ;
GLASS, RC ;
TUOMI, T ;
JANZEN, E .
JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :267-276
[5]   EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM [J].
VODAKOV, YA ;
MOKHOV, EN ;
RAMM, MG ;
ROENKOV, AD .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (06) :729-740
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