Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

被引：16

作者：

Bai, Yu ^{[1
,2
]}

Wang, Zhan Jie ^{[1
,2
,3
]}

Cui, Jian Zhong ^{[1
]}

Zhang, Zhi Dong ^{[2
]}

机构：

[1] Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China

[2] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China

[3] Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 20期

基金：

中国国家自然科学基金;

关键词：

ferroelectric heterostructures; tunability; depletion layer width; semiconducting electrode; FERROELECTRIC THIN-FILMS; TUNNEL-JUNCTIONS; ELECTRORESISTANCE; FIELD;

D O I：

10.1088/1361-6463/aaba6b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.

引用

页数：7

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