Effect of Reactive Gas Flow Ratio on IC-PECVD Deposited a-SiC:H Thin Films

被引：7

作者：

Frischmuth, Tobias ^{[1
]}

Schneider, Michael ^{[1
]}

Grille, Thomas ^{[2
]}

Schmid, Ulrich ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Sensor & Actuator Syst, Floragasse 7-2, A-1040 Vienna, Austria

[2] Infineon Technol Austria AG, A-9500 Villach, Austria

来源：

28TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS (EUROSENSORS 2014) | 2014年 / 87卷

关键词：

Silicon carbide; residual stress; PECVD; MEMS; FTIR; MEMS;

D O I：

10.1016/j.proeng.2014.11.543

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon carbide layers are deposited using an inductive-coupled plasma -enhanced chemical vapour deposition process. The nominal thickness of the thin films is 300 nm and the chemical composition ranges from carbon rich to pure Si films by varying the silane to methane ratio x. The compressive residual stress of the Si-C compound exhibits a maximum at x = 0.45. The deposition rate and the refractive index increase linearly with increasing x. Furthermore, Fourier transformed infrared spectroscopy shows a correlation of the Si-C vibration mode with the residual stress. 2014 The Authors. Published by Eslevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/). Peer-review under responsibility of the scientific committee of Eurosensors 2014

引用

页码：128 / 131

页数：4

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