The electronic structure of TiN and VN: X-ray and electron spectra compared to band structure calculations

被引:41
作者
Soriano, L
Abbate, M
Pen, H
Prieto, P
Sanz, JM
机构
[1] CNPQ,LAB NACL LUZ SINCROTRON,BR-13081970 CAMPINAS,SP,BRAZIL
[2] UNIV GRONINGEN,CTR MAT SCI,NL-9747 AG GRONINGEN,NETHERLANDS
关键词
thin films; electronic band structure; photoelectron spectroscopies;
D O I
10.1016/S0038-1098(96)00780-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We studied the electronic structure of TiN and VN by means of band structure calculations and spectroscopic techniques. The band structure calculations show that the bonding in these compounds is mostly covalent. The Fermi level intersects the transition metal 3d bands giving rise to the metallic conductivity observed in these nitrides. The particularly large stability of these compounds is due to filled metal 3d-nitrogen 2p bonding states. The X-ray photoemission (XPS) and the N 1s X-ray absorption (XAS) spectra are related to the occupied electronic states in the valence band and to the unoccupied electronic states in the conduction band respectively. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:291 / 296
页数:6
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