Film growth by polyatomic C2H5+ bombarding a diamond (100) surfaces: Molecular dynamics study

被引:3
作者
Lu, X. D. [1 ]
Qin, Y. [1 ]
Ning, J. [1 ]
Zhou, T. [1 ]
Deng, C. Y. [1 ]
Meng, Ch. [1 ]
Qiu, Q. [2 ]
Gou, F. [1 ,3 ]
Chuanwu, Zhang
Ying, Yan
Ming, Jiang
机构
[1] Guizhou Univ, Inst Plasma Surface Interact, Guiyang 550025, Guizhou Prov, Peoples R China
[2] Guiyang Med Coll, Guiyang 550025, Guizhou Prov, Peoples R China
[3] FOM Inst Plasma Phys, NL-3430 BE Nieuwegein, Netherlands
关键词
Molecular dynamics methods; Surface etching; Plasma-based ion implantation and deposition; CARBON; DEPOSITION; SIMULATION; EROSION; IMPACT;
D O I
10.1016/j.nimb.2009.06.059
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The deposition of polyatomic C2H5+ ions is studied using classical molecular dynamics simulations with a new improved Brenner potentials developed by Brenner. The simulation results show that when the incident energy is less than 65 eV, the deposition coefficient of H is larger than that of C atoms. When the incident energy is larger than 65 eV, the deposition of H is less than that of C atoms. With increasing incident energy, a transition from Csp3-rich to Csp2-rich in the grown films is found. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3238 / 3241
页数:4
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