Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

被引：11

作者：

Shu, Lei ^{[1
,2
]}

Zhao, Yuan-Fu ^{[1
,3
]}

Galloway, Kenneth F. ^{[4
]}

Wang, Liang ^{[3
]}

Wang, Xin-Sheng ^{[5
]}

Yuan, Zhang-Yi'an ^{[6
]}

Zhou, Xin ^{[6
,7
]}

Chen, Wei-Ping ^{[1
]}

Qiao, Ming ^{[6
]}

Wang, Tian-Qi ^{[1
]}

机构：

[1] Harbin Inst Technol, Harbin 150001, Peoples R China

[2] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

[3] Beijing Microelect Technol Inst, Beijing 100076, Peoples R China

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[5] Harbin Inst Technol Weihai, Weihai 264209, Peoples R China

[6] Univ Elect Sci & Technol China, Chengdu 611731, Peoples R China

[7] Univ Elect Sci & Technol China, Inst Elect & Informat Engn, Chengdu 611731, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Electric fields; Degradation; Microelectronics; Length measurement; Doping; Total ionizing dose; Breakdown voltage; drift region length; silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs); technology computer-aided design (TCAD) simulation; total dose;

D O I：

10.1109/TNS.2020.2970743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, Shu et al. published "Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS." This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.

引用

页码：2392 / 2395

页数：4

共 20 条

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