Strategies for improving radiation tolerance of Si space solar cells

被引：29

作者：

Khan, A

Yamaguchi, M

Ohshita, Y

Dharmaraso, N

Araki, K

Khanh, VT

Itoh, H

Ohshima, T

Imaizumi, M

Matsuda, S

机构：

[1] Toyota Technol Inst, Semicond Res Ctr, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[2] Japan Atom Energy Res Inst, Gunma 3701292, Japan

[3] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期

关键词：

Si solar cells; radiation damage; dopant species; carrier removal effect; end of life performance; compensating centers;

D O I：

10.1016/S0927-0248(02)00169-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The present study explored first time the better radiation tolerance of gallium-doped silicon solar cells as compared to conventional boron-doped silicon solar cells after heavy fluence of I MeV electron irradiation. One of the approaches to improve the end of life of silicon solar cells is by increasing the effective base carrier concentrations. Analysis of the carrier removal rate RC in boron, gallium and aluminum-doped Si solar cells showed that carrier removal effects can be partially offset by using gallium as dopant instead of boron. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：271 / 276

页数：6

共 8 条

[1]

HOVEL HJ, 1975, SEMICONDUCT SEMIMET, V11, P157

[2] Influence of the dopant species on radiation-induced defects in Si single crystals [J].