Mechanism of dopant segregation to SiO2/Si(001) interfaces

被引：20

作者：

Dabrowski, J ^{[1
]}

Casali, RA ^{[1
]}

Müssig, HJ ^{[1
]}

Baierle, R ^{[1
]}

Caldas, MJ ^{[1
]}

Zavodinsky, V ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.1306310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dopant atoms segregate to SiO2/Si(001) interfaces and are deactivated there. This can cause problems in fabrication of submicron microelectronic devices. On the basis of ab initio calculations, we propose a mechanism for donor segregation and deactivation. We argue that donor species (P and As) are trapped as threefold-coordinated atoms at interface defect sites (dangling bonds and Si vacancies) and, most significantly, in form of dopant pairs at defect-free interfaces. This pairing will dominate when dopant concentration exceeds approximately 10(19) cm(-3). (C) 2000 American Vacuum Society. [S0734-211X(00)08504-8].

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页码：2160 / 2164

页数：5

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